An investigation of the Pd‐In‐Ge nonspiking Ohmic contact ton‐GaAs using transmission line measurement, Kelvin, and Cox and Strack structures
作者:
L. C. Wang,
X. Z. Wang,
S. N. Hsu,
S. S. Lau,
P. S. D. Lin,
T. Sands,
S. A. Schwarz,
D. L. Plumton,
T. F. Kuech,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4364-4372
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348360
出版商: AIP
数据来源: AIP
摘要:
The Pd‐In‐Ge nonspiking Ohmic contact ton‐GaAs has been investigated using the transmission line, the Kelvin, and the Cox and Strack structures. It has been found that a layered structure of Pd/In/Pd/n‐GaAs with 10–20 A˚ of Ge imbedded in the Pd layer adjacent to the GaAs can lead to a hybrid contact. When the Ohmic formation temperature is above 550 °C, a layer of InxGa1−xAs doped with Ge is formed between the GaAs structure and the metallization. When the Ohmic formation temperature is below 550 °C, a regrown layer of GaAs also doped with Ge is formed at the metallization/GaAs interface. The contact resistivity of 2–3×10−7&OHgr; cm2for this contact structure is nearly independent of the contact area from 900 to 0.2 &mgr;m2. Low‐temperature Ohmic characteristics and thermal stability are also examined.
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