Sequential nature of damage annealing and activation in implanted GaAs
作者:
J. L. Tandon,
J. H. Madok,
I. S. Leybovich,
G. Bai,
M‐A. Nicolet,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 5
页码: 448-450
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100948
出版商: AIP
数据来源: AIP
摘要:
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation‐induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs isn‐type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomesn‐ orp‐type, or remains semi‐insulating, commensurate to the chemical nature of the implanted ion. Such a two‐step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors.
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