Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy
作者:
Zhongze Wang,
Siu L. Kwan,
T. P. Pearsall,
J. L. Booth,
B. T. Beard,
S. R. Johnson,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 1
页码: 116-121
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589235
出版商: American Vacuum Society
关键词: GaAs
数据来源: AIP
摘要:
We demonstrate real-time semiconductor processing temperature control based on direct, noninvasive,in situmeasurement of wafer temperature by diffuse reflectance spectroscopy. The precision of the controlled temperature was maintained within±0.5 °C with an update time of 2 s over a temperature range from 25 to 600 °C for semi-insulating GaAs wafers. Direct control of the wafer temperature using diffuse reflectance spectroscopy is compared to the usual situation where the wafer heater temperature is controlled. The direct control of wafer temperature using diffuse reflectance spectroscopy is shown to be a significant improvement over conventional heater control technology in accuracy, stability, repeatability and response rate, for dynamic control of wafer temperature in the range of 25–600 °C. Our technology can also be applied to Si and other semiconductor wafers following appropriate calibration.
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