Composition depth profiles of oxidized silicon and sputtered GaAs from angle‐resolved x‐ray photoelectron spectroscopy
作者:
T. D. Bussing,
P. H. Holloway,
Y. X. Wang,
J. F. Moulder,
J. S. Hammond,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 5
页码: 1514-1518
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584205
出版商: American Vacuum Society
关键词: GALLIUM ARSENIDES;ARGON IONS;COLLISIONS;SPUTTERING;CHEMICAL COMPOSITION;SILICA;X RADIATION;PHOTOELECTRON SPECTROSCOPY;KEV RANGE 01−10;SURFACES;SEGREGATION;ATOM TRANSPORT;DIFFUSION;GaAs
数据来源: AIP
摘要:
An inverse Laplace transform method has been used to extract composition depth profiles from angle‐resolved x‐ray photoelectron spectroscopy data from oxidized Si and Ar+bombarded GaAs. An iterative procedure determines a least‐squares curve fit of the data using the Laplace transforms of step functions, which are summed to yield the composition profiles. For a sample of native oxide on a Si wafer, the composition profile defines the thickness and chemical layering of the various silicon oxide states. For GaAs sputtered with 1.5‐, 3.0‐, and 5.0‐keV Ar+, the composition depth profiles show a surface composition near the bulk ratio, a subsurface As depletion, the extent of which increases with increasing ion energy, then a return to the bulk composition at greater depth. These As composition profiles result from preferential sputtering caused by surface segregation enhanced by sputter‐assisted diffusion in the near surface region.
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