In this article, a new charge-extraction algorithm is proposed for extracting the spatial distributions of hot-carrier-induced interface states and trapped charges inp- andn- metal-oxide-semiconductor field-effect transistors, based on the charge-pumping measurement data. This extraction algorithm is physics based and provides a better understanding of how the presence of hot-carrier-induced trapped charges and interface states affect the charge-pumping curves. The extraction time for this new algorithm is very fast (typically 30 s) and does not require very tedious computer simulation. The verification of this method was performed using TSUPREM-4 and MEDICI simulations. With this new extraction method, one can gain better insight into the degradation mechanisms taking place under different hot-carrier stressing conditions. ©1997 American Institute of Physics.