The effects of implantation damage on B diffusion are analyzed through the use of29Si implants. Implant doses of29Si ranging from 1×1012/cm2to 1×1014/cm2were used to create controlled amounts of damage. Temperatures ranging from 800 to 1000 °C were used to anneal the implant damage. For all anneal temperatures, the peak B concentration was well below the intrinsic electron concentration. Even for29Si doses as low as 1×1012/cm2significantly enhanced B diffusion was observed. The largest enhancement in B diffusion was observed for the highest29Si implant dose and lowest anneal temperature. The kinetics of damage annealing determine the transient enhancement in the B profile. These results have important implications for the formation of shallow junctions using ion implantation.