Wide optical gap (2.0 eV) boron‐doped hydrogenated amorphous silicon carbide films were prepared by the plasma‐assisted chemical vapor deposition technique from a SiH4+CH4+BF3+H2gas mixture for the first time. The film showed a photoconductivity of 1×10−5S/cm under 1 sun illumination, which was higher by a factor of 5 than the films doped with B2H6.