The dependence of boron neutralization on the hydrogenation temperature was studied systematically in 2‐&OHgr;‐cm, B‐doped crystalline silicon. The maximum penetration depth of H increases with temperature. The migration of H has an activation energy of 0.39 eV. The B neutralization, measured as surface resistivity, reaches a maximum at 100 °C. The surface resistivity reverts to the bulk value above 160 °C. The bond breaking that reactivates the acceptors has an activation energy of 0.76 eV.