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Concentration profiles of boron implantations in amorphous and polycrystalline silicon

 

作者: W.K. Hofker,   D.P. Oosthoek,   N.J. Koeman,   H.A. M. de grefte,  

 

期刊: Radiation Effects  （Taylor Available online 1975）
卷期: Volume 24, issue 4  

页码: 223-231

 

ISSN:0033-7579

 

年代: 1975

 

DOI:10.1080/00337577508240811

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Boron was implanted in amorphous silicon at energies in the range 30–200 keV and in polycrystalline silicon at energies in the range 70–800 keV. The boron distributions were measured with secondary ion mass spectrometry. By comparing the boron distributions in amorphous silicon and in polycrystalline silicon it was found that the used polycrystalline silicon behaves similarly to amorphous silicon for the boron stopping process.

 

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