Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition
作者:
Chuing‐Liang Lin,
Yan‐Kun Su,
Xi‐Ming Chen,
Ying‐Ke Qin,
期刊:
Journal of the Chinese Institute of Engineers
(Taylor Available online 1995)
卷期:
Volume 18,
issue 2
页码: 161-168
ISSN:0253-3839
年代: 1995
DOI:10.1080/02533839.1995.9677679
出版商: Taylor & Francis Group
关键词: superlattice;MOCVD;infrared photodetector
数据来源: Taylor
摘要:
It was observed that the conduction‐band minimum of InAs is lower in energy than the valence‐band maximum of GaSb. This will cause the non‐rectification characteristic. Such unusual nonrectifying p‐n junction is the direct consequence of interpenetration between the GaSb valence band and the InAs conduction band, since the InAs‐GaSb superlattices can have a band gap smaller than that of either constituent materials. InAs‐GaSb superlattices have the modifiable band gap, but the absorption coefficient shall decrease rapidly when the period thickness is over 100 Å(d1=d2). It has a good spectral response in 3–5 μm region, but bad in 8–14 μm. The new proposal offered a normal incidence valence intersubband transition at ∼10μm. It is potential to fabricate the long wavelength devices.
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