Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
作者:
T. J. Schmidt,
S. Bidnyk,
Yong-Hoon Cho,
A. J. Fischer,
J. J. Song,
S. Keller,
U. K. Mishra,
S. P. DenBaars,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3689-3691
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122864
出版商: AIP
数据来源: AIP
摘要:
Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length(Lexc).Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high-energy peak was observed to always be lower than that of the low-energy peak, but the difference was found to decrease greatly with increasingLexc.A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region. ©1998 American Institute of Physics.
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