We report the operation of the first Ga0.47In0.53As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition. The undoped region of thep‐i‐nstructure consists of 100 periods of alternating InP and Ga0.47In0.53As layers 100 A˚ thick with no intentional doping. dc multiplication higher than 20 and high‐speed response with full width at half‐maximum of 200 ps have been measured.