Ionization rates for electrons and holes in GaAs
作者:
Masanori Ito,
Shuzo Kagawa,
Takao Kaneda,
Toyoshi Yamaoka,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 8
页码: 4607-4608
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325443
出版商: AIP
数据来源: AIP
摘要:
Ionization rates in GaAs are determined from the measurement of photocarrier multiplication. Pure electron and hole initiations are achieved by using the novel crater mesa structure and appropriate optical‐injection wavelengths. The ionization rates for holes are greater than that for electrons except at highest fields. This agrees with the studies of Stillmanetal., except for the individual values. The ionization rates for electrons and holes are expressed as &agr;=5.6×106 exp(−2.41×106/E) and &bgr;=1.5×106 exp(−1.57×106/E), respectively.
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