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Capless annealing of ion‐implanted GaAs 

 

作者: A. A. Immorlica,   F. H. Eisen,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 29, issue 2  

页码: 94-95

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88981

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A method is reported for capless annealing of ion‐implanted GaAs which gives electrical activation of Se‐implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State‐of‐the‐art performance has been realized from Schottky‐gate FET’s fabricated from this material.

 

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