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InGaAsP/InP optical switches using carrier induced refractive index change

 

作者: K. Ishida,   H. Nakamura,   H. Matsumura,   T. Kadoi,   H. Inoue,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 3  

页码: 141-142

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97695

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InGaAsP/InP optical switches have been fabricated which use a carrier induced refractive index change. Switching has been achieved with a power isolation of 20.5 dB in a 1‐mm‐long device in multimode operation. This is a promising new step toward making optical integrated circuits.

 

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