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Demonstration of a heterostructure field‐effect laser for optoelectronic integration

 

作者: G. W. Taylor,   P. R. Claisse,   P. Cooke,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 7  

页码: 666-668

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104562

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new laser structure suitable for optoelectronic integration is reported. It utilizes field effect at a heterointerface within the same structure used to build field‐effect transistors. A threshold current density of 560 A/cm2and a differential quantum efficiency of 56% were achieved.

 

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