The lattice mismatch in and out of the orientation direction was measured in layers of CoSi2grown by high dose implantation and annealing. A comparison of (111), (100), and (110) orientations showed that the lateral mismatches were similar but the perpendicular mismatch increased monotonically through the series. The differences in the degree of relaxation of the three orientations provide a possible explanation for the observed anisotropy in the electrical properties.