We have fabricated and electrically characterized mm‐wave high electron mobility transistors (HEMTs) on pseudomorphic heterostructure GaAs/InGaAs samples. The T‐ and Γ‐shaped gates were produced using electroplating and a conventional single resist‐layer lift‐off process. High frequency measurements of the same device before and after plating demonstrate the reduction in gate resistance. Direct current and high frequency properties of the HEMTs depend strongly on gate length and gate recess depth. Characterization of parallel conducting layers, low field mobility, and sheet carrier concentration depth profiles were obtained with gated Hall measurements. Best HEMT performance was obtained at a gate length of 60 nm, giving an extrinsic (intrinsic) transconductance of 620 mS/mm (840 mS/mm) and a cutoff frequencyftof 135 GHz.