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Reply to ’’Comments on ’Raman scattering from boron‐implanted laser annealed silicon’ ’’

 

作者: Herbert Engstrom,   J. B. Bates,  

 

期刊: Journal of Applied Physics  （AIP Available online 1981）
卷期: Volume 52, issue 6  

页码: 4340-4340

 

ISSN:0021-8979

 

年代: 1981

 

DOI:10.1063/1.329252

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Because separate experiments have shown that our samples were well annealed, we disagree with the conculsion of Formanetal. [J. Appl. Phys. 52, 4337 (1981)], that accounting for the silicon optic mode lineshape requires inclusion of the effect of incomplete annealing.

 

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