Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices
作者:
N. Overend,
A. Nogaret,
B. L. Gallagher,
P. C. Main,
M. Henini,
C. H. Marrows,
M. A. Howson,
S. P. Beaumont,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1724-1726
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121164
出版商: AIP
数据来源: AIP
摘要:
We investigate a new type of magnetoresistance (MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagnetic grating defined on the surface of the device. We observe an increase in resistance of up to∼1500&percent;at a temperature of 4 K and∼1&percent;at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR. ©1998 American Institute of Physics.
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