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Temperature dependence of large positive magnetoresistance in hybrid ferromagnetic/semiconductor devices

 

作者: N. Overend,   A. Nogaret,   B. L. Gallagher,   P. C. Main,   M. Henini,   C. H. Marrows,   M. A. Howson,   S. P. Beaumont,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 14  

页码: 1724-1726

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121164

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate a new type of magnetoresistance (MR) in which the resistivity of a near-surface two-dimensional electron gas is controlled by the magnetization of a submicron ferromagnetic grating defined on the surface of the device. We observe an increase in resistance of up to∼1500&percent;at a temperature of 4 K and∼1&percent;at 300 K. The magnitude and temperature dependence of the MR are well accounted for by a semiclassical theory. Optimization of device parameters is expected to increase considerably the magnitude of the room temperature MR. ©1998 American Institute of Physics.

 

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