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Doping Zn1−xMnxSentype

 

作者: Run‐Di Hong,   John D. Dow,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 25  

页码: 2597-2598

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101061

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The standardn‐type dopant Ga is predicted to change its character from a shallow donor to a deep trap with increasing alloy compositionxin Zn1−xMnxSe. As a result, Ga‐doped Zn1−xMnxSe alloys should bentype for very smallx, but not for Mn‐rich material.

 

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