Heavily boron‐doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2source
作者:
T. L. Lin,
R. W. Fathauer,
P. J. Grunthaner,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 8
页码: 795-797
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101763
出版商: AIP
数据来源: AIP
摘要:
Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary‐ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550–700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron‐doped layers have been grown at 600 °C without detectable oxygen incorporation.
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