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Photoreflectance measurements on Si &dgr;‐doped GaAs samples grown by molecular‐beam epitaxy

 

作者: A. A. Bernussi,   F. Iikawa,   P. Motisuke,   P. Basmaji,   M. Siu Li,   O. Hipolito,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 9  

页码: 4149-4151

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344976

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We investigate &dgr;‐doped GaAs samples grown by molecular‐beam epitaxy with different silicon areal concentration and cap layer thickness, using photoreflectance spectroscopy. The features observed on the high‐energy side of the fundamental gap are attributed to transitions involving electronic sub‐bands in the &dgr;‐doped potential well that take into account the diffusion of the dopants.

 

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