Trapping centres in Cl-doped GaSe single crystals
作者:
G. Micocci,
A. Serra,
A. Tepore,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6200-6204
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364404
出版商: AIP
数据来源: AIP
摘要:
Thermally stimulated current (TSC) and photoconductivity were studied as a function of temperature and light intensity in ann-GaSe single crystal doped with chlorine. TSC measurements were performed in the range 80–450 K, and the results were analyzed by different methods. An electron trapping centre at about 0.38 eV below the conduction band and an electron capture cross section of(8±2)×10−18 cm2were determined. In this centre retrapping is negligible. A strong thermal quenching of photocurrent was observed at various excitation levels. The photocurrent results were analyzed by a simple kinetic model taking into account two different types of centres. In this way a hole centre about 0.20 eV above the valence band was observed. ©1997 American Institute of Physics.
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