p‐type alloyed ohmic contacts of Au/Mn/Ni/Au have been fabricated for application to compound semiconductor devices. Extremely low resistance contacts to 3×1019cm−3Be‐dopedp‐GaAs were achieved by electron‐beam evaporation and rapid thermal annealing. Contacts were thermally stable, and the contact resistance remained below 0.04 Ω mm in the temperature range from 360 to 450 °C. Annealing at 400 °C for 40 s resulted in a minimum contact resistance of 0.012 Ω mm, corresponding to a specific resistivity of 1.6×10−8Ω cm2, which is very close to the theoretical predictions. The mechanism of formation of Au/Mn ohmic contacts was discussed, based on Auger electron spectroscopy data.