首页   按字顺浏览 期刊浏览 卷期浏览 Multiplication noise of InP avalanche photodiodes
Multiplication noise of InP avalanche photodiodes

 

作者: T. Shirai,   F. Osaka,   S. Yamasaki,   T. Kaneda,   N. Susa,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 2  

页码: 168-169

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92650

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An InP avalanche photodiode with a guard ring structure is fabricated. The maximum avalanche gain obtained is 210 at a primary photocurrent of 0.2 &mgr;A, and uniform photoresponse without local enlargement is obtained at an avalanche gain of 10. Multiplication noise characteristics are investigated, and the effective ionization rate ratio of holes to electrons is found to be 1.7–1.8.

 

点击下载:  PDF (157KB)



返 回