The evolution of magnetic “bubble” technology has continued at a rapid pace. Many garnet compositions, prepared as epitaxial films, are now available for both materials and device characterization. Films of the nominal composition Er2Eu1Ga.7Fe4.3012, grown by LEE with growth induced anisotropy, have been most extensively studied. Although films with defect counts less than 5 defects/cm2are readily produced, this particular garnet is hampered by the rather modest mobility of 80 cm/sec/0e and 100 kbits/sec device data rates. Although most garnets easily provide storage densities of 106bits/in2, the higher device data rates achievable with increased mobility have prompted a widespread materials search. However, improvements in bubble propagation circuits can also increase the device data rate. Improved high speed performance has been achieved with a “chevron” bubble circuit which consists of columns of permalloy ∧'s arranged as “(see PDF for diagram)”. Domains will be driven to the right by the fields of moving lines of magnetic poles generated by an in‐plane field rotated clockwise. Within the range of device operation either bubbles or island strip domains propagate. The number of ∧'s in a column can be adjusted to suit individual circuit requirements. For example, a two element 20 &mgr;m period chevron circuit has operated at 300 kHz with an epitaxial garnet film Er1.99Gd1.01Ga.22Fe4.78012 with a mobility 89 cm/sec/0e. Simultaneous propagation of as many as three domains with movement lateral to the direction of propagation in a 13 element circuit has made possible the design of a full adder. Details of a chevron bubble mass memory will be described.