Long-wavelength(≈15.5 &mgr;m)unipolar semiconductor laser in GaAs quantum wells
作者:
O. Gauthier-Lafaye,
P. Boucaud,
F. H. Julien,
S. Sauvage,
S. Cabaret,
J.-M. Lourtioz,
V. Thierry-Mieg,
R. Planel,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 25
页码: 3619-3621
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120459
出版商: AIP
数据来源: AIP
摘要:
A unipolar semiconductor laser emitting in the mid-infrared spectral region is demonstrated. The laser scheme relies on a simple three-level system in GaAs/AlGaAs asymmetric coupled quantum wells. Population inversion between excited states is achieved by optical pumping of electrons from the ground state with aCO2laser. Long-wavelength(≈15.5 &mgr;m)laser emission is demonstrated. The laser is operated in the pulsed regime up to a temperature of 110 K and with an output peak power≈0.4 Wat 77 K. Unipolar quantum well semiconductor lasers based on this principle are capable of covering the long wavelength mid-infrared spectral region above 12 &mgr;m. ©1997 American Institute of Physics.
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