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Long-wavelength(≈15.5 &mgr;m)unipolar semiconductor laser in GaAs quantum wells

 

作者: O. Gauthier-Lafaye,   P. Boucaud,   F. H. Julien,   S. Sauvage,   S. Cabaret,   J.-M. Lourtioz,   V. Thierry-Mieg,   R. Planel,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 25  

页码: 3619-3621

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120459

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A unipolar semiconductor laser emitting in the mid-infrared spectral region is demonstrated. The laser scheme relies on a simple three-level system in GaAs/AlGaAs asymmetric coupled quantum wells. Population inversion between excited states is achieved by optical pumping of electrons from the ground state with aCO2laser. Long-wavelength(≈15.5 &mgr;m)laser emission is demonstrated. The laser is operated in the pulsed regime up to a temperature of 110 K and with an output peak power≈0.4 Wat 77 K. Unipolar quantum well semiconductor lasers based on this principle are capable of covering the long wavelength mid-infrared spectral region above 12 &mgr;m. ©1997 American Institute of Physics.

 

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