The threshold current density and the characteristic temperature of strain‐compensated InGaAs/InGaAsP/GaAs QW lasers are investigated theoretically. These results are also compared with those of uncompensated InGaAs/InGaAsP/GaAs QW lasers. From this calculation, it was confirmed that strain‐compensated lasers have lower threshold current density and better performance at high temperature compared to uncompensated lasers. This is attributed to enhanced carrier confinement and weaker temperature dependence ofNthfor strain‐compensated lasers. The well number dependence of the characteristic temperature is dominant for lasers with relatively short cavity length. ©1995 American Institute of Physics.