Microwave reflection measurements are widely used for the characterization of minority‐carrier lifetimes in semiconductors. A theoretical description of the technique is presented. The approach is based on a dielectric multilayer model that accounts for experimental parameters such as microwave frequency, sample thickness and doping, and the distance to an optional reflector behind the sample. With a new definition of the sensitivity in transient microwave reflection measurements, the most sensitive configuration is investigated for a given semiconductor thickness and conductivity. Good agreement between the theoretical simulation and measurements is demonstrated. The model is also used for calculating microwave reflection transients from the excess carrier decay after pulsed laser excitation. It is found that the reflected microwave power mirrors the carrier decay if three criteria are fulfilled: The carrier generation must be homogeneous; low‐injection conditions are required; and the reflector must be positioned appropriately for linear dependence of the microwave reflection on the carrier density. ©1995 American Institute of Physics.