Picosecond relaxation of hot carriers in highly photoexcited bulk GaAs and GaAs‐AlGaAs multiple quantum wells
作者:
Z. Y. Xu,
C. L. Tang,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 7
页码: 692-694
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94880
出版商: AIP
数据来源: AIP
摘要:
The relaxation rate of hot carriers following picosecond photoexcitation in GaAs‐AlGaAs multiple quantum well structures is found to be significantly slower than the corresponding rate for bulk GaAs under high excitations. This is confirmed by a detailed comparison of the hot‐luminescence tails for the two cases using picosecond pulse and cw photoexcitations.
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