Increased precision in strain measurement of diamond by microRaman spectroscopy
作者:
W. Brock Alexander,
Paul H. Holloway,
Joseph Simmons,
Romulo Ochoa,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1994)
卷期:
Volume 12,
issue 5
页码: 2943-2945
ISSN:0734-2101
年代: 1994
DOI:10.1116/1.578973
出版商: American Vacuum Society
关键词: DIAMONDS;THIN FILMS;SPUTTERED MATERIALS;TUNGSTEN;INTERNAL STRAINS;MEASURING METHODS;RAMAN SPECTRA;CALIBRATION;ACCURACY;diamonds;W
数据来源: AIP
摘要:
MicroRaman spectroscopy has been used to measure stress in diamond with improved precision. Stress was induced by rf sputter deposited tungsten films of 1‐ and 9‐μm thickness. Preliminary data showed a systematic error in the diamond Raman peak position of about 0.05 cm−1/scan, which led to inaccurate and imprecise stress measurement. A new technique, using a reference 5520‐Å krypton line only 10.5 cm−1from the Raman diamond line, results in an order of magnitude increase in measurement precision. Using this calibration, diamond peak position could be measured with a precision of ±0.03 cm−1which corresponds to ±11 MPa of stress. This is an easy and inexpensive means to improve stress measurements in diamond by microRaman spectroscopy.
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