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Point defect modelling and transport processes in AgBr

 

作者: RadhaD. Banhatti,   Y.V. G. S. Murti,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1995）
卷期: Volume 134, issue 1-4  

页码: 157-159

 

ISSN:1042-0150

 

年代: 1995

 

DOI:10.1080/10420159508227204

 

出版商: Taylor & Francis Group

 

关键词: AgBr;point defects;formation enthalpies;defect modelling;ionic conductivity and diffusion.

 

数据来源: Taylor

 

摘要:

We have modelled cationic Frenkel defects, Schottky defects and bound vacancy pairs in AgBr according to the recently introduced EPPI model. Our findings suggest a significant role for Schottky defects in the excess high temperature conductivity and also an important role for bound vacancy pairs in anion self-diffusion.

 

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