首页   按字顺浏览 期刊浏览 卷期浏览 Upconverting Tm‐dopedBaYYbF8optical waveguides epitaxially grown on GaAs
Upconverting Tm‐dopedBaYYbF8optical waveguides epitaxially grown on GaAs

 

作者: L. S. Hung,   G. R. Paz‐Pujalt,   T. N. Blanton,   D. D. Tuschel,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 19  

页码: 2454-2456

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113993

 

出版商: AIP

 

数据来源: AIP

 

摘要:

TM‐dopedBaYYbF8films were epitaxially grown on both (100) and (111) GaAs substrates usingCaF2or LiF as intermediate layers. TheBaYYbF8phase was found to be a previously unreported cubic phase with a lattice constant of 0.5711 nm, which is different from a monoclinic phase reported for bulk crystals. The films produced UV and visible radiation with wavelengths at 360 nm (UV), 450–480 nm (blue), and 500–550 nm (green) when pumped by laser radiation at 647 nm. ©1995 American Institute of Physics.

 

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