Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index‐guided shallow mesa laser arrays. Single‐stripe devices have threshold currents as low as 14 mA (533 &mgr;m length) and ten‐element arrays have threshold currents as low as 9 mA per stripe with 52% differential quantum efficiency. These arrays operate phase locked with sharp double‐lobed far‐field patterns up to 1.75 times threshold current.