Effect of collector‐base valence‐band discontinuity on Kirk effect in double‐heterojunction bipolar transistors
作者:
B. Mazhari,
H. Morkoc¸,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 17
页码: 2162-2164
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106115
出版商: AIP
数据来源: AIP
摘要:
The effect of valence‐band discontinuity at the collector base heterojunction on the current gain and base charge storage is modeled. It is shown that the onset of the Kirk effect is accompanied by a sharp drop in the current gain andftdue to the formation of a potential barrier. The variation of barrier height with collector current density is determined and its effect on current gain and base transit time described. The results discussed here are applicable to Si/SiGe double‐heterojunction bipolar transistors.
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