An estimate of free-carrier absorption by photon-ionized impurity-plasmon processes in n-type Hg1−xCdxTe
作者:
Qian Dingrong,
W. Szuszkiewicz,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1987)
卷期:
Volume 55,
issue 3
页码: 147-151
ISSN:0950-0839
年代: 1987
DOI:10.1080/09500838708228747
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The infrared absorption spectra for a sample of Hg1−xCdxTe withx= 0·19 reported previously have been recalculated including both the absorption due to individual carrier transition and that due to collective excitation of carriers (plasmons), taking into account the dispersion of refractive index and the non-parabolicity of the energy band in the absence of Landau damping. The agreement between theory and experiment is good and suggests that free-carrier absorption due to collective excitation can play a noticeable role in the frequency range from ωpup to 2ωpand above. The value of the concentration of ionized impurities thus obtained is believed to be more accurate than that obtained previously.
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