Differential gain of strained InGaAs/InGaAsP quantum‐well lasers lattice matched to GaAs
作者:
Seoung‐Hwan Park,
Hwa‐Min Kim,
Weon‐Guk Jeong,
Byung‐Doo Choe,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 79,
issue 4
页码: 2157-2159
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.361042
出版商: AIP
数据来源: AIP
摘要:
The theoretical study on the differential gain of InxGa1−xAs/InGaAsP quantum‐well (QW) lasers lattice matched to GaAs is presented. These results were also compared with those of InxGa1−xAs/GaAs QW lasers. The differential gain of InGaAs/InGaAsP lasers continuously increases with the In composition. On the other hand, InGaAs/GaAs lasers show the decrease of the differential gain when the In composition exceeds about 0.22. The increase of the differential gain observed in InGaAs/InGaAsP lasers is mainly due to the increase of the subband energy spacing in the conduction band. The decrease of the differential gain observed in InGaAs/GaAs lasers is related to the decrease of the energy spacing in the conduction band and the decrease of the optical matrix element. ©1996 American Institute of Physics.
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