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Investigation of optically allowed transitions of &agr;‐sulfur thin films

 

作者: A. K. Abass,   A. K. Hasen,   R. H. Misho,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 58, issue 4  

页码: 1640-1642

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.336053

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thin films of &agr;‐sulfur were prepared on quartz plates by a high‐vacuum thermal‐evaporation method. In an optical investigation of the thin films at room temperature, a direct allowed transition at 4.43 eV was observed. An indirect allowed transition was also observed with a band gap of 2.61 eV and assisting phonons of 0.11 eV. These observations were supported by reflectivity data obtained by an integrating sphere.

 

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