Investigation of optically allowed transitions of &agr;‐sulfur thin films
作者:
A. K. Abass,
A. K. Hasen,
R. H. Misho,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 4
页码: 1640-1642
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.336053
出版商: AIP
数据来源: AIP
摘要:
Thin films of &agr;‐sulfur were prepared on quartz plates by a high‐vacuum thermal‐evaporation method. In an optical investigation of the thin films at room temperature, a direct allowed transition at 4.43 eV was observed. An indirect allowed transition was also observed with a band gap of 2.61 eV and assisting phonons of 0.11 eV. These observations were supported by reflectivity data obtained by an integrating sphere.
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