Transmission electron microscopy (TEM) image contrast was used to characterize doping-dependent etching ofn+/pjunctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The etchant solution used for selective chemical etching of TEM samples prepared using wedge technique was modified to reduce the etch rate and maintain high selectivity to then+doped region. The two-dimensional dopant profiles were quantified by calibrating against one-dimensional secondary ion mass spectroscopy data and also compared with one-dimensional spreading resistance analysis data. ©1997 American Institute of Physics.