By placing a semi‐insulating GaAs wafer on a flat, rare‐earth magnet, and irradiating the surface with two perpendicular slits of light to form a Greek cross configuration, it is possible to perform photoresistivity and photo‐Hall‐effect topography on the wafer. The technique is nondestructive in that the contacts are tiny, removable In dots which are placed only on the periphery. By varying the wavelength of the light, selective centers, such as EL2, can be mapped. We compare a 1.1‐&mgr;m, photoexcited electron concentration map with a quantitative EL2 map on a 3‐in. undoped, liquid‐encapsulated Czochralski wafer.