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Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects...
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Refractive indices of InSb, InAs, GaSb, InAsxSb1−x, and In1−xGaxSb: Effects of free carriers
作者:
P. P. Paskov,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 4
页码: 1890-1898
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365360
出版商: AIP
数据来源: AIP
摘要:
A detailed study of the refractive indices of the narrow-band-gap III–V semiconductors is presented. The calculation is based on a numerical Kramers–Kronig analysis of the carrier-related imaginary part of the dielectric function. The near-band-gap refractive index spectra of InSb, InAs, and GaSb for different free-carrier densities are obtained. The density dependence of the refractive index is analyzed and a comparison with the results from the Drude theory is performed. The refractive indices of In1−xGaxSb and InAsxSb1−xternary alloys are also investigated. The obtained results are expected to be useful in the design optimization of the phase modulators and the laser diodes for midinfrared applications. ©1997 American Institute of Physics.
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