Temperature and flow effects in aluminum etching using bromine‐containing plasmas
作者:
A. Landauer Keaton,
D. W. Hess,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 1
页码: 72-76
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584055
出版商: American Vacuum Society
关键词: SURFACE REACTIONS;ETCHING;ALUMINIUM;BROMINE;BORON BROMIDES;ADSORPTION;Al
数据来源: AIP
摘要:
The effects of sample temperature and reactant flow rate on aluminum etching in BBr3and BBr3/Br2mixtures were investigated in a parallel‐plate plasma etcher. Etch samples were bonded to the electrode with conductive epoxy to promote thermal equilibrium. Results indicated that the reaction was gas phase controlled between 30 and 140 °C; above 140 °C, the gas phase limitation may be due to reactant adsorption while a product desorption limitation may exist below 30 °C. Transport limitations were encountered at reactant flow rates below 10 sccm.
点击下载:
PDF
(363KB)
返 回