We have reduced the gate voltage required to achieve a given emission current density in field‐emitter arrays by scaling down the gate‐to‐tip and tip‐to‐tip spacing to the unprecedented levels of 0.08 and 0.32 μm, respectively. The submicrometer features of our arrays are patterned using interferometric lithography. Electrical tests of arrays we have fabricated have shown a record low turn‐on voltage of 8 V for cesiated molybdenum emitters. Emission current densities of 1600 A/cm2have been obtained, which is also a record for such structures. These arrays provide large advantages for applications such as flat panel displays and microwave devices.