Minority‐electron transport inp‐GaAs with a wide range of acceptor doping concentration from 1017to 1019cm−3is studied in detail. Using the Monte Carlo method in which electron‐hole interactions are taken into account, electron transport properties inp‐GaAs, such as drift velocity and electron temperature, are calculated. The calculated results show good agreement with the experimental ones. Furthermore, in order to make the features of minority‐electron transport clear, the electron transport properties inn‐GaAs, where electrons act as majority carriers, are also calculated. In comparison with majority‐electron transport, drift velocity, and electron temperature for the minority electron are greatly reduced. Throughout the study, it is shown that the interaction with holes is essential for minority‐electron transport inp‐GaAs.