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Dielectric breakdown, negative resistivity, depletion widths and the role of Bi in strontium bismuth tantalate (SBT) devices

 

作者: J.F. Scott,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1998）
卷期: Volume 19, issue 1-4  

页码: 85-93

 

ISSN:1058-4587

 

年代: 1998

 

DOI:10.1080/10584589808012696

 

出版商: Taylor & Francis Group

 

关键词: SBT;bismuth;memories

 

数据来源: Taylor

 

摘要:

A discussion is presented on details of dielectric breakdown in ferroelectric thin-film memories, including BST and SBT. The origin of negative differential resistivity is revisited. And subtleties of depletion widths in ferroelectric films and of elemental bismuth at the SBT/Pt electrode interface are considered.

 

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