Nanometer‐scale recording on an organic‐complex thin film with a scanning tunneling microscope
作者:
L. P. Ma,
Y. L. Song,
H. J. Gao,
W. B. Zhao,
H. Y. Chen,
Z. Q. Xue,
S. J. Pang,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 24
页码: 3752-3753
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117181
出版商: AIP
数据来源: AIP
摘要:
Nanometer‐scale recording on an organic‐complex thin film with a scanning tunneling microscope (STM) under ambient conditions is demonstrated. The recording marks are made by applying external voltage pulses between the tip and the highly ordered pyrolytic graphite substrate. A 30×30 nm2STM image with recorded marks is given. The average recorded mark is 1.3 nm in diameter, which corresponds to a data storage density of about 1013bits/cm2. The current–voltage characteristics measured by the STM show an insulator behavior for the unrecorded regions, and a conductor behavior for the recorded regions, which indicates that the data are recorded by local change of the electrical property of the films. ©1996 American Institute of Physics.
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