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Nanometer‐scale recording on an organic‐complex thin film with a scanning tunneling microscope

 

作者: L. P. Ma,   Y. L. Song,   H. J. Gao,   W. B. Zhao,   H. Y. Chen,   Z. Q. Xue,   S. J. Pang,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 24  

页码: 3752-3753

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117181

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Nanometer‐scale recording on an organic‐complex thin film with a scanning tunneling microscope (STM) under ambient conditions is demonstrated. The recording marks are made by applying external voltage pulses between the tip and the highly ordered pyrolytic graphite substrate. A 30×30 nm2STM image with recorded marks is given. The average recorded mark is 1.3 nm in diameter, which corresponds to a data storage density of about 1013bits/cm2. The current–voltage characteristics measured by the STM show an insulator behavior for the unrecorded regions, and a conductor behavior for the recorded regions, which indicates that the data are recorded by local change of the electrical property of the films. ©1996 American Institute of Physics.

 

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