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Magnetocrystalline anisotropy in epitaxially grown (Gd,Tm,Y)3(Fe,Ga)5O12garnet thin fil...
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Magnetocrystalline anisotropy in epitaxially grown (Gd,Tm,Y)3(Fe,Ga)5O12garnet thin films
作者:
A. Gangulee,
R. J. Kobliska,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 6
页码: 3333-3337
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328043
出版商: AIP
数据来源: AIP
摘要:
Single‐crystal thin films of gallium‐substituted mixed garnets (Gd,Tm,Y)3(Fe,Ga)5O12, grown by liquid phase epitaxy, have been used as drive layer materials in contiguous disk bubble devices; a critical parameter for the selection of a specific composition is the value of the magnetocrystalline anisotropy constantK1. We have measured the values ofK1in a series of epitaxial thin films grown on (100) and (111) oriented gadolinium gallium garnet substrates.K1in the (100) oriented films were measured both by ferrimagnetic resonance and with an inductive hysteresigraph, whereas only resonance measurements were employed in the (111) oriented films. The values ofK1for each composition, obtained by different methods from films with different orientations, agree reasonably well with each other and are consistent with what would be expected from linear extrapolation of theK1’s of pure rare‐earth iron garnets after an empirical correction for gallium substitution.
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