Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy
作者:
Ch. Maierhofer,
S. Munnix,
D. Bimberg,
R. K. Bauer,
D. E. Mars,
J. N. Miller,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 1
页码: 50-52
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101751
出版商: AIP
数据来源: AIP
摘要:
A simultaneous reduction of interface roughness and of impurity and trap incorporation in GaAs/AlGaAs quantum wells is observed for a decrease of the molecular beam epitaxy growth rate below its standard value 1 &mgr;m/h, down to 0.1 &mgr;m/h, at a substrate temperature of 620 °C. Thus, layer quality is drastically improved at low, nonstandard growth rates. Incorporation of impurities from the background is observed to induce a transition from two‐ to three‐dimensional growth. The conclusions are based on a detailed study and line shape analysis of quantum well luminescence.
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