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Semiconductors at high pressure: New physics with the diamond-anvil cell

 

作者: IanL. Spain,  

 

期刊: Contemporary Physics  (Taylor Available online 1987)
卷期: Volume 28, issue 6  

页码: 523-546

 

ISSN:0010-7514

 

年代: 1987

 

DOI:10.1080/00107518708213742

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A brief review is given of experiments on semiconductors at high pressure, using the diamond-anvil cell. Experimental techniques are discussed first, with emphasis on the reasons why they have revolutionized high-pressure science. Then, examples of experimental results are given, including X-ray diffraction (equation of state, structural phase transitions, metastable phases), Raman and Brillouin spectroscopy (lattice-mode frequencies), photoluminescence spectroscopy (electronic and defect energies), resistivity and galvanomagnetic effects (scattering mechanisms and electronic transitions). These examples are taken from Si, GaAs, InP and solid H2.

 

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